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FDP18N20F / FDPF18N20FT N-Channel MOSFET
September 2009
FDP18N20F / FDPF18N20FT
N-Channel MOSFET
200V, 18A, 0.14 Features
* RDS(on) = 0.12 ( Typ.)@ VGS = 10V, ID = 9A * Low gate charge ( Typ. 20nC) * Low Crss ( Typ. 24pF) * Fast switching * 100% avalanche tested * Improve dv/dt capability * RoHS compliant
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.
D
G GDS
TO-220 FDP Series
GD S
TO-220F FDPF Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 100 0.83 -55 to +150 300 18 10.8 72 324 18 10 4.5 41 0.33 FDP18N20F FDPF18N20FT 200 30 18* 10.8* 72* Units V V A A mJ A mJ V/ns W W/oC
oC oC
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Sink Typ. Thermal Resistance, Junction to Ambient FDP18N20F FDPF18N20FT 1.2 0.5 62.5 3.0 62.5
oC/W
Units
(c)2009 Fairchild Semiconductor Corporation FDP18N20F / FDPF18N20FT Rev. A
1
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FDP18N20F / FDPF18N20FT N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking FDP18N20F FDPF18N20FT Device FDP18N20F FDPF18N20FT Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC ID = 250A, Referenced to 25oC VDS = 200V, VGS = 0V VDS = 160V, TC = 125oC VGS = 30V, VDS = 0V 200 0.2 10 100 100 V V/oC A nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 9A VDS = 20V, ID = 9A
(Note 4)
3.0 -
0.12 13.6
5.0 0.14 -
V S
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 160V, ID = 18A VGS = 10V
(Note 4, 5)
VDS = 25V, VGS = 0V f = 1MHz
-
885 200 24 20 5 9
1180 270 35 26 -
pF pF pF nC nC nC
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 100V, ID = 18A RG = 25
(Note 4, 5)
-
16 50 50 40
40 110 110 90
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 18A VGS = 0V, ISD = 18A dIF/dt = 100A/s
(Note 4)
-
80 240
18 72 1.5 -
A A V ns nC
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 2mH, IAS = 18A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 18A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDP18N20F / FDPF18N20FT Rev. A
2
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FDP18N20F / FDPF18N20FT N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
50
VGS = 10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V
Figure 2. Transfer Characteristics
30
ID,Drain Current[A]
ID,Drain Current[A]
10
10
150 C 25 C
o
o
1
*Notes: 1. 250s Pulse Test 2. TC = 25 C
o
*Notes: 1. VDS = 20V 2. 250s Pulse Test
1 0.1 1 VDS,Drain-Source Voltage[V] 10 4 5 6 VGS,Gate-Source Voltage[V] 7
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.25
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
100
RDS(ON) [], Drain-Source On-Resistance
IS, Reverse Drain Current [A]
150 C
o
o
0.20
VGS = 10V
25 C
10
0.15
VGS = 20V
*Note: TJ = 25 C
o
*Notes: 1. VGS = 0V
2. 250s Pulse Test
0.10 0 10 20 30 ID, Drain Current [A] 40 50
1 0.0
0.4 0.8 1.2 1.6 VSD, Body Diode Forward Voltage [V]
2.0
Figure 5. Capacitance Characteristics
2000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
VDS = 40V VDS = 100V VDS = 160V
8
1500 Capacitances [pF]
*Note: 1. VGS = 0V 2. f = 1MHz Ciss
6
1000
4
Coss
500
Crss
2
*Note: ID = 18A
0 0.1
0
1 10 VDS, Drain-Source Voltage [V] 30
0
6 12 18 Qg, Total Gate Charge [nC]
24
FDP18N20F / FDPF18N20FT Rev. A
3
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FDP18N20F / FDPF18N20FT N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2 BVDSS, [Normalized] Drain-Source Breakdown Voltage
Figure 8-1. Maximum Safe Operating Area - FDP18N20F
100
20s 100s
ID, Drain Current [A]
1.1
10
1ms
1.0
1
Operation in This Area is Limited by R DS(on)
10ms DC
*Notes:
0.9
0.1
*Notes: 1. VGS = 0V 2. ID = 250A
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
o
0.8 -100
0.01
-50 0 50 100 o 150 TJ, Junction Temperature [ C]
200
1
10 100 VDS, Drain-Source Voltage [V]
600
Figure 8-2. Maximum Safe Operating Area - FDPF18N20FT
100
10s 100s
Figure 9. Maximum Drain Current vs. Case Temperature
20
ID, Drain Current [A]
10
ID, Drain Current [A]
1ms
16
1
Operation in This Area is Limited by R DS(on)
10ms
12
8
*Notes:
DC
o o
0.1
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
4
0.01 1 10 100 VDS, Drain-Source Voltage [V]
600
0 25
50 75 100 125 o TC, Case Temperature [ C]
150
Figure 10-1. Transient Thermal Response Curve - FDP18N20F
2 1 Thermal Response [ZJC]
0.5 0.2
0.1
0.1
PDM
0.05 0.02 0.01
t1
*Notes:
t2
o
0.01
Single pulse
1. ZJC(t) = 1.2 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
10
-5
10
-4
10 10 10 10 Rectangular Pulse Duration [sec]
-3
-2
-1
0
10
1
10
2
FDP18N20F / FDPF18N20FT Rev. A
4
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FDP18N20F / FDPF18N20FT N-Channel MOSFET
Figure 10-2. Transient Thermal Response Curve - FDPF18N20FT
2
0.5
Thermal Response [ZJC]
1
0.2 0.1 0.05
PDM t1 t2
0.1
0.02 0.01
*Notes: 1. ZJC(t) = 3.0 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
o
0.01
Single pulse
10
-5
10
-4
10 10 10 10 Rectangular Pulse Duration [sec]
-3
-2
-1
0
10
1
10
2
FDP18N20F / FDPF18N20FT Rev. A
5
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FDP18N20F / FDPF18N20FT N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP18N20F / FDPF18N20FT Rev. A
6
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FDP18N20F / FDPF18N20FT N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT V
+
DS
_ I
SD
L D r iv e r R
G
S am e T ype as DUT
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d
V GS ( D r iv e r )
G a t e P u ls e W id t h D = -------------------------G a te P u ls e P e r io d
10V
IF M , B o d y D io d e F o r w a r d C u r r e n t
I
SD
(DUT ) IR M
d i/ d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lt a g e D r o p
FDP18N20F / FDPF18N20FT Rev. A
7
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FDP18N20F / FDPF18N20FT N-Channel MOSFET
Mechanical Dimensions
TO-220
FDP18N20F / FDPF18N20FT Rev. A
8
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FDP18N20F / FDPF18N20FT N-Channel MOSFET
Package Dimensions
TO-220F Potted
* Front/Back Side Isolation Voltage : 4000V
Dimensions in Millimeters
FDP18N20F / FDPF18N20FT Rev. A
9
www.fairchildsemi.com
FDP18N20F / FDPF18N20FT N-Channel MOSFET
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Rev. I41
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
10 FDP18N20F / FDPF18N20FT Rev. A
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